As the Senior Director of Engineering/R&D for SiC and GaN Power Devices, you will play a pivotal role in driving the technological advancement and product development within our semiconductor division. You will lead a team of highly skilled engineers and researchers to innovate, design, and deliver cutting-edge SiC and GaN power devices that meet the evolving needs of our customers and the industry.
Key Responsibilities:
1. Technical Leadership: Provide strategic direction and technical leadership to the engineering and R&D teams in the development of SiC and GaN power devices. Set clear objectives, prioritize projects, and ensure alignment with company goals and market requirements.
2. Research and Development: Drive R&D initiatives to explore new technologies, materials, and device architectures for improving the performance, efficiency, and reliability of SiC and GaN power devices. Foster a culture of innovation and experimentation within the organization.
3. Product Development: Oversee the end-to-end product development lifecycle, from concept ideation to commercialization. Work closely with cross-functional teams including product management, marketing, and manufacturing to ensure timely delivery of high-quality products that exceed customer expectations.
4. Team Management: Build and mentor a world-class engineering and R&D team. Provide guidance, support, and professional development opportunities to cultivate a high-performance culture and attract top talent.
5. Collaboration: Collaborate with external partners, academic institutions, and industry consortia to stay abreast of the latest advancements in SiC and GaN technology. Establish strategic partnerships and alliances to accelerate innovation and enhance our competitive position.
6. Quality and Compliance: Ensure adherence to quality standards, regulatory requirements, and industry best practices in all aspects of engineering and R&D activities. Implement robust processes and methodologies to drive continuous improvement and operational excellence.
Requirements
- Ph.D. or master's degree in electrical engineering, Materials Science, or related field with a focus on semiconductor device physics and technology.
- Minimum of 10 years of experience in semiconductor engineering, with a strong track record of leading R&D teams and delivering successful products in the field of SiC and GaN power devices.
- Deep technical expertise in SiC and GaN semiconductor materials, device design, fabrication processes, and characterization techniques.
- Proven leadership skills with the ability to inspire, motivate, and empower teams to achieve ambitious goals and overcome technical challenges.
- Excellent communication and interpersonal skills, with the ability to effectively collaborate with internal stakeholders, external partners, and customers.
- Strong business acumen and strategic thinking, with the ability to translate technical innovations into commercial opportunities and drive revenue growth.
- Demonstrated commitment to quality, integrity, and ethical conduct in all aspects of work.
Renesas Electronics
Renesas is a top global semiconductor company developing products for automotive, industrial, infrastructure, and IoT markets.
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